The world's fastest picosecond range high voltage semiconductor switches and generators.
Fast nanosecond rise time switches and generators with peak current up to kA range, operating voltage up to tens kV, and repetition rate up to hundreds kHz.
Switches and generators with sub-microsecond pulse rise time, peak current up to tens kA, operating voltage up to tens kV, and high repetition rate.
Microsecond range high power switches and generators with output peak current up to hundreds kA and operating voltage up to tens kV.
Megaimpulse Ltd. designs and produces a wide range of high-power and ultra-fast generators and switches based on principally new types of semiconductor devices. Mega-amperes peak current, pico-, and nanoseconds pulse rise time, tens of kilovolts output pulse amplitude, high repetition rate up to Megahertz range are available now. New types of semiconductor devices such as RSD, DSRD, FID, DLD, SAS which have been developed within more than thirty years allow us to design reliable, compact, and high efficient pulsed power equipment.
May 27, 2021
Uploaded info about NPG-10/100k new nanosecond series pulse generator designed for small gap discharges with increased pulse repetiton rate, for example, sparking plug.
April 05, 2021
Uploaded info about NPG-20/3500 nanosecond series pulse generator with 50 Ohm impedance.
April 02, 2020
Updated INFO page: Datasheets, User Manuals, waveforms, and large photos of the products.
March 06, 2020
New PPM series of picosecond pulse generator modules with improved output pulse stability, improved cooling, and increased max repetition rate.
August 28, 2019
Updated information about picosecond pulse generators. Uploaded new information about PPG-3/200, PPG-4/100, and PI-5/100.
January 10, 2019
Updated information about nanosecond pulse generators.
February 15, 2018
Uploaded information about NPG-18/100k burst mode nanosecond pulse generators with up to 100kHz repetition rate.
Megaimpulse Ltd. was founded in 1992 at Solid State Electronics Division of Ioffe Physico-Technical Institute, which is one of the world-leading physical institutes in the field of semiconductors and semiconductor electronics. The fundamental research performed in Ioffe Institute laboratories during the last 30 years allows us to develop a range of principally new semiconductor devices such as RSD, DSRD, FID, DLD, SAS and significantly increase the ability of the semiconductors for high power, high voltage, and ultrafast applications. And now we are working in tight contact with Ioffe Institute and permanently improving the parameters of our devices.