MORE INFO:

    Product table,
    Datasheets,
    and Manuals...

Key features:

• Semiconductor based technology provides high output parameters, high efficiency and reliability, low jitter, long operation lifetime, excellent pulse waveform stability
• Based on Drift Step Recovery Diodes (DSRD) and Silicon Avalanche Shapers (SAS) - new types of semiconductor devices
• Compact and reliable design
• kV range output pulse voltage
• Fastest pulse rise time
• High repetition rate

Application areas:

• Ultra-Wide Band radars
• Phased Antenna Arrays
• Underground radars
• Ultra-Wide Band communication systems
• Signal jamming systems
• Testing of attenuators and various electronic equipment
• Testing of electronic devices for the electromagnetic interference immunity
• Medical and biological applications
• etc.

MORE INFO:

    Product table,
    Datasheets,
    and Manuals...

Key features:

• Totally semiconductor-based technology
• Based on Drift Step Recovery Diodes (DSRD), principally new type of semiconductor devices
• Compact and reliable design
• High energy efficiency
• Output pulse voltage up to tens kV
• Nanosecond pulse rise time
• High repetition rate

Application areas:

• Plasma chemistry and reforming
• Burners and plasma-assisted flame
• Barrier discharge applications, ozone production, cold plasma source, water and gas cleaning, disinfection
• Medical applications, cell electroporation
• Plasma actuators
• Plasma generation for surface cleaning and modification technologies
• Pumping of laser tubes
• Pockels and Kerr cells drivers
• etc.